Semiconductor device strucutre having a two-dimensional electron gas and contact thereto

摘要

A semiconductor device includes a very low dopant impurity concentration InGaAs active layer in which a two-dimensional electron gas is produced, the active layer being disposed on a semiconductor substrate; a very low dopant impurity concentration spacer layer contacting the active layer at a first surface and having an electron affinity smaller than the electron affinity of the active layer; and a very thin InGaAs electron supply layer having a high n type dopant impurity concentration and contacting the spacer layer opposite the active layer. Degradation of device characteristics due to heating of the device is reduced with a result that a thermally stable and highly reliable semiconductor device is easily realized.