发明名称 MAGNETIC TUNNELING JUNCTION ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a magnetic tunneling junction element by which a magnetic tunneling effect can be revealed stably. SOLUTION: An element is constituted in such a way that a first magnetic metal layer 1 and a second magnetic metal layer 2 are formed so as to be ferromagnetically tunnel-junctioned via an insulating layer and that the electric conductivity of a tunnel current is changed by the relative angle of the magnetization of the magnetic metal layers 1, 2. In this case, the junction area of their ferromagnetic tunnel junction is set at 1×10<-9> cm<2> or lower. In order to surely regulate the junction area of the ferromagnetic tunnel junction, e.g. the insulating layer is constituted of a first insulating layer 3 for the ferromagnetic tunnel junction and of a second insulating layer 8 which is formed on the insulating layer 3 and which regulates the junction area of the ferromagnetic tunnel junction.
申请公布号 JPH09269361(A) 申请公布日期 1997.10.14
申请号 JP19960077980 申请日期 1996.03.29
申请人 SONY CORP 发明人 KUMAGAI SEIJI;YAOI TOSHIHIKO;IKEDA YOSHITO
分类号 G01R33/06;H01L43/00;H01L43/08;(IPC1-7):G01R33/06 主分类号 G01R33/06
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