| 摘要 |
PROBLEM TO BE SOLVED: To form a plug metal buried in a connection hole by making it protruded above an inter layer insulation film. SOLUTION: A wiring 2 and an interlayer insulation film are formed 3, to form a connection hole in the interlayer insulation film. As a plugging metal film, a bracket film made of tungsten is formed by heat CVD in order to fill in the hole completely. A tungsten plug 7 is etched back all over the tungsten film surface in order to keep the tungsten film remaining only in the connection hole. Then, a part of the tungsten plug 7 is protruded above the upper surface of SiO2 film 3 by etching back the whole SiO2 film 3 surface using a mixed gas of CHF3 and C2 F6 . After forming a Ti film 8a by sputtering and forming an AlSiCu film 8b by high temperature sputtering, a second layer, wiring 8, patterning AlSiCu film 8b and Ti film 8a are formed. |
