| 摘要 |
An interconnect structure (10) is formed by filling a dual damascene structure (12) with conductive material. A barrier layer (13) is formed to serve as a seed layer and to prevent the out-diffusion of copper. A discontinuous film (30) of islands (41) is used to dope the interconnect structure (10)with copper. A conductive layer (14) is formed to fill a first portion (21) and a second portion (22) of the damascene structure (12). An anneal step is performed to diffuse the copper into the conductive layer (14).
|
