| 摘要 |
PROBLEM TO BE SOLVED: To provide a quantum dot element to which carrier is injected effectively without the consumption of the carrier at the quantum well structure around the quantum dot and the method of manufacture. SOLUTION: The quantum doe element comprises a barrier layer 2 that comprises AlGaAs and quantum dots 4 that are made of InGaAs of which band gap is smaller than that of the AlGaAs and of which lattice constant is different from that of the AlGaAs, and is provided with an intermediate layer 3 with the thickness of several atomic layers between the barrier layer 2 and the quantum dots 4 made of InAlAs of which band gap is larger than that of the AlGaAs and of which lattice constant is the same as that of the InGaAs. |
