| 摘要 |
PROBLEM TO BE SOLVED: To increase each selectivity in an etching process, improve controllability of a device etching process, increase reproducibility of a resulting structure, and improve yield of an end product, by selecting a material constituting a semiconductor light-emitting element. SOLUTION: This device has a layer structure made of an n-type AlS3 GaS6 N clad layer 3 of a low etching rate, and an InS2 AlS5 N layer 4, a P-type InS4 AlS7 N clad layer 5 and a p-type InN layer 6 of a high etching rate which are sequentially stacked on the n-type AlS3 GaS6 N clad layer 3. The n-type AlS3 GaS6 N clad layer 3 is etched to be partly exposed via the p-type InN layer 6, the P-type InS4 AlS7 N layer 5 and the InS2 AlS5 N layer 4. When these layers are etched, the difference between the etching rate of the InS2 AlS5 N layer 4, the P-type InS4 AlS7 N clad layer 5 and the p-type InN layer 6, and the etching rate of the n-type AlS3 GaS6 N clad layer 3 facilitates partial exposition and etching of the n-type AlS3 GaS6 N clad layer 3. |
