发明名称 |
Semiconductor apparatus and production method for the same |
摘要 |
A gate wire is formed so as to extend from an active area to a separation, and an impurity diffused area is formed on each side of the gate electrode located on the active area. A contact member for connecting the gate wire to a first layer aluminum interconnection formed in an upper layer of the gate wire is in contact with the gate wire at a portion located on the active area. The utilization ratio of the active area is thus improved, and hence, the width of the separation can be minimized. In addition, by eliminating a mask alignment margin from the gate wire and suppressing the width of the gate wire not to exceed the width of the contact member, the occupied area of a semiconductor apparatus can be reduced.
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申请公布号 |
US5677249(A) |
申请公布日期 |
1997.10.14 |
申请号 |
US19960670927 |
申请日期 |
1996.06.26 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
FUKUI, MASAHIRO;SEGAWA, MIZUKI;AKINO, TOSHIRO;MATSUMOTO, MICHIKAZU |
分类号 |
H01L23/522;H01L21/28;H01L21/336;H01L21/768;H01L21/82;H01L21/8234;H01L27/08;H01L27/088;H01L27/118;H01L29/78;(IPC1-7):H01L21/265 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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