发明名称 |
Semiconductor memory having redundancy memory decoder circuit |
摘要 |
A redundancy decoder circuit includes an output line U which takes an active level when an access address supplied thereto is coincident with a redundant address programmed therein. This circuit further includes a fuse F which is blown to deactivate the decoder or not blown to activate the decoder, a latch circuit latching a level responsive to a blown or not-blown state of the fuse, and a transistor controlled by the latch circuit to forcibly hold the output line at an inactive level when the fuse is blown.
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申请公布号 |
US5677882(A) |
申请公布日期 |
1997.10.14 |
申请号 |
US19950540981 |
申请日期 |
1995.10.11 |
申请人 |
NEC CORPORATION |
发明人 |
ISA, SATOSHI;FUJITA, MAMORU |
分类号 |
G11C11/401;G11C29/00;G11C29/04;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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