发明名称 Semiconductor memory having redundancy memory decoder circuit
摘要 A redundancy decoder circuit includes an output line U which takes an active level when an access address supplied thereto is coincident with a redundant address programmed therein. This circuit further includes a fuse F which is blown to deactivate the decoder or not blown to activate the decoder, a latch circuit latching a level responsive to a blown or not-blown state of the fuse, and a transistor controlled by the latch circuit to forcibly hold the output line at an inactive level when the fuse is blown.
申请公布号 US5677882(A) 申请公布日期 1997.10.14
申请号 US19950540981 申请日期 1995.10.11
申请人 NEC CORPORATION 发明人 ISA, SATOSHI;FUJITA, MAMORU
分类号 G11C11/401;G11C29/00;G11C29/04;(IPC1-7):G11C7/00 主分类号 G11C11/401
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