SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To realize a wiring layer low in resistance and flat even if a ground structure has a sharp drop in surface level because it is possessed of a contact hole or a through-hole large in the aspect ratio by a method wherein the surface of the wiring layer is made to contain hydrogen. SOLUTION: A wafer is loaded into a chamber for the formation of a wiring metal layer. A sputtering process is carried out in a hydrogenated atmosphere. It is preferable that the wiring metal layer is formed in a plasma atmosphere produced by ionizing gas composed of Ar or Xe and 0. 1 to 10% H2 by discharge. It is preferable that a cryopump is not used but a turbo-molecular pump is used as a pump because sputtering is carried out in a hydrogen- containing atmosphere. By this setup, a part 8 of a first wiring layer located over a contact hole is restrained from overhanging, so that the surface of the wiring layer becomes almost flat.