| 摘要 |
PROBLEM TO BE SOLVED: To measure a contamination degree of a manufacture environment of a semiconductor device such as a washing liquid and a semiconductor washing device. SOLUTION: An oxide film with a film thickness of 100 to 700Åis formed on the surface of an n-type semiconductor substrate (step S2), and washing (step S3) is performed with a washing liquid followed by measuring a fixed charge amount on the surface of the oxide film (step S4) so as to find a metal impurity amount from a correlation between a fixed charge amount and a metal impurity amount. Because of the n-type substrate, many kinds of metal impurities can be detected, further, since the oxide film with a film thickness of 100 to 700Åis in advance formed, a growth on standing of a natural oxide film after washing can be prevented and a fixed charge amount is hard to be fluctuated due to a lapse of time from washing moreover an absolute value of the fixed value is large.
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