发明名称 Method for forming electrostatic discharge protection device for integrated circuit
摘要 An electrostatic discharge (ESD) device includes a pair of depletion mode MOSFETs connected drain-to-drain in a series path between an input terminal and an output terminal, the gate of each MOSFET being connected to its source. A first diode having a relatively high breakdown voltage is connected between ground and the common drain terminal of the MOSFETs, and a second diode having a relatively low breakdown voltage is connected between ground and the output terminal of the device. The second diode breaks down during a relatively low, long-lived voltage spike (in an automobile, sometimes referred to as a "load dump"), while the second MOSFET saturates, limiting the size of the current through the second diode. The first diode breaks down during a large voltage spike of short duration, such as occurs from an ESD.
申请公布号 US5677205(A) 申请公布日期 1997.10.14
申请号 US19950472943 申请日期 1995.06.06
申请人 SILICONIX INCORPORATED 发明人 WILLIAMS, RICHARD K.;HILLE, PETER;WRATHALL, ROBERT G.
分类号 H01L27/04;H01L21/822;H01L27/06;H01L29/78;H02H9/02;H02H9/04;H03K19/003;H05F3/02;(IPC1-7):H01L21/04 主分类号 H01L27/04
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