Wafer holding member

摘要

Disclosure relates to the method for improving the heat absorption characteristic of a wafer holding member made of aluminum nitride during indirect heating and the method for preventing electrostatic adhesion. To establish the former method, the wafer holding member comprises an aluminum nitride based sintered body containing Er2O3 as a sintering aid and silicon in the range of more than 200 ppm to 500 ppm or less and having a thermal conductivity of 150 W/m.k or more, and further comprises a holding base body made of an aluminum nitride based sintered body.