| 摘要 |
The invention provides an integrated circuit including a capacitor provided with a silicon nitride film formed on a lower electrode of a polycrystalline silicon film by a rapid thermal nitridation method, a BaTiO3 film formed on the silicon nitride film and an upper electrode. The above capacitor structure can prevent the formation of a silicon oxide layer at the interface between the polycrystalline silicon film and the BaTiO3, and thus has high capacitance.
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