Power component module for MOSFET, e.g. DMOS, or bipolar transistor

摘要

The module includes several identical cells in a semiconductor substrate, each cell having two main electrode zones (S,D), between which is located a control electrode zone (6), with all zones in parallel. A first metallising film (MET 1) is coupled to the two electrode zones by through contacts. Above the first metallising film is located a second one (MET 2) coupled by through contacts (ViA 1). A third, top metallising film (MET 3) is coupled to the first film via contacts (ViA 1), or to the second film via contacts (ViA 2) to the second film. The first two films are of Al, or an Al compound, or alloy, and are of different thickness, while the third film is of a metal, compound, or alloy of greater thickness.