TAPE CAST SILICON CARBIDE DUMMY WAFER

摘要

This invention relates to tape casting a silicon carbide slip to eventually produce a silicon carbide wafer having a thickness of between 0.5 and 1 mm and a diameter of at least 100 mm, the wafer preferably having a strength of at least 30 MPa, and a porosity wherein at least 85 % of the pores are no larger than 12 microns.