| 摘要 |
<p>The present invention concerns an auto-saving circuit (1) for programming configuration elements of non-volatile memory cells organized in a cells matrix in a memory device integrated on a semiconductor with said circuit being inserted between a first (Vdd) and a second (GND) power supply reference voltage and being powered also by programming voltages (Vpcx,Vpcy) generated inside the memory device to produce at output programming signals (UPR-CG,UPR-PG) of the configuration elements. The circuit in question comprises a first (2) and a second (3) circuit portion, one for each signal output (U1,U2) and each powered by a respective programming voltage (Vpcx,Vpcy) and each comprising a switching network with at least one high threshold transistor (P2,P9) and decoupling elements (Ca,Cb,Ck,Cp) to give inertia to the circuit against electrostatic discharges or accidental power supply variations. <IMAGE></p> |
