| 摘要 |
<p>An embodiment of the instant invention is a method of controlling the grain size of a deposited material formed over a substrate to a first thickness, the method comprising the steps of: forming a first layer of the material to a second thickness which is less than the first thickness; forming a thin intermediate layer on the first layer, the intermediate layer having a grain structure which is different than the grain structure of the first layer; forming a second layer of the material on the thin intermediate layer to a third thickness which is less than the first thickness such that the first thickness is equal to the sum of the second and third thicknesses. Preferably, the intermediate layer is an interstitial layer. Preferably, the steps of forming the first layer, the thin intermediate layer on the first layer, and the second layer on the thin intermediate layer is repeated at least one time. Preferably, the first and the second layers are comprised of a material selected from the group consisting of: CVD metals, CVD dielectric films and CVD semiconductor films; more specifically, the first and the second layers are comprised of a material selected from the group consisting of. CVD aluminum and CVD polysilicon. <IMAGE></p> |
