| 摘要 |
PURPOSE:To simplify a process, and prevent the short of aluminum electrode by a method wherein a second opening part is formed by selectively etching a second insulating film, polycrystalline semiconductor layer and first insulating film, and a metal film is stuck by eliminating the second insulating film by using a selectively formed barrier metal layer as a mask. CONSTITUTION:In a first insulating film 6 covering a semiconductor substrate 1, a first opening part to form a first electrode, and a polycrystalline semiconductor layer 9 and a second insulating film 12 are deposited on the whole surface including the opening part. The second insulating film 12, the polycrystalline semiconductor layer 9 and the first insulating film 6 are selectively etched in the region different from the first opening part, and a second opening part to form a second electrode is formed. On the substrate surface in the second opening part, a silicide alloy film 13 is formed, and a barrier metal film 14 is selectively formed so as to cover the second opening part. By using the barrier metal film 14 as a mask, the second insulating film 12 on the polycrystalline semiconductor layer 9 is eliminated, and a metal film 15 is stuck to the whole surface. The metal film 15 is selectively etched together with the polycrystalline semiconductor layer 9 so as to be left in the first and the second opening parts. |
