| 摘要 |
PURPOSE:To lessen a semiconductor integrated circuit device in parasitic resistance component and to obtain the device of higher performance by a method wherein a polycrystalline silicon film constituting a capacitive element is made low in resistance by turning it into silicide or injecting impurity into it. CONSTITUTION:Silicide films 4, for instance TiSi2 films, are formed by turning a part of a first polycrystalline and the surface of a second polycrystalline silicon film 3 into silicide respectively. Thereafter, an oxide film 1b is deposited, a contact hole 7 is bored, and an aluminum electrode 5 is provided, whereby a capacitive element so structured that a thin oxide film 1a is sandwiched between the first polycrystalline silicon film 2 and the second polycrystalline silicon film 3 is formed on the thick oxide film 1 on a semiconductor substrate. By this setup, the silicide films 4 are formed and the region of the first polycrystalline silicon film 2 just under the oxide film which forms a capacitive element is enhanced in impurity concentration, whereby the resistance component of a polycrystalline silicon film parasitic on the capacitive element can be reduced. |
