| 摘要 |
PURPOSE:To simplify steps of forming a pair of positive and negative electrodes of the same side in a method for manufacturing a light emitting diode of GaN compound semiconductor, to eliminate an irregularity in a light emission at a position of a blue light emission region of the diode and to improve its light emission intensity. CONSTITUTION:In a light emitting diode 10, an electrode 7 of an i-type layer 5 is formed at a center on the layer 5, and an electrode 8 of a high carrier concentration n<+> type layer 3 is so formed as to connect from the layer 5 to the side of the layer 3 on the periphery of the electrode 7. Thus, holes for forming conventional electrodes can be eliminated in the diode to simplify the manufacturing steps. The electrodes 7, 8 of the diode 10 are so formed that, a distance between the electrodes is substantially equalized to make the currents flowing therebetween to the same irrespective of the position of the light emission region. Then, the diode 10 can eliminate an irregularity in the light emission in the blue light emission region to improve light emission intensity. |
