| 摘要 |
PURPOSE: To constitute a solar battery which can realize high photoelectric conversion efficiency and a low cost by forming a non-single crystalline silicon layer or a non-single crystalline silicon alloy layer in a part excepting an electrode unloading part through a non-silicon layer of a single atomic layer or more. CONSTITUTION: An n<+> -diffusion layer 2 is formed by using a silicon substrate of (100) 2Ωcm as a P-type substrate 1 by using P0Cl3 as a source and an Al electrode 8 is formed in a rear and is thermally treated at 800 deg.C. After a P<+> - diffusion layer 3 is formed and a rear is covered with photoresist, an extremely thin oxide film layer 4a is formed. After 10nm-thick n-type fine crystalline silicon 4 is formed and processed on the oxide film layer 4a by P-CVD method, an Sin, film 5 and a TiO2 , film are formed by CVD method under a normal pressure and are processed to form an electrode layer 7 to enable contact with the n<+> -diffusion layer 2. As for optical absorption by the fine crystalline silicon 4, optical loss in the part is at most 5% because of a thin film thickness. Therefore, a solar battery which can realize high photoelectronic conversion efficiency and a low cost can be constituted. |
