| 摘要 |
PROBLEM TO BE SOLVED: To limit warp of a silicon substrate to a predetermined value or less without depending on a fabrication apparatus and without using a specific interlayer film process, by constructing a multilayered wiring structure having 3 or more wiring layers such that the silicon substrate provided on the multilayered wiring structure is set to a thickness satisfying a specific equation. SOLUTION: In a fabrication method of a semiconductor device in which there is provided a multilayered wiring structure having 3 or more wiring layers, the thickness of a silicon substrate is assumed to be T, the diameter D, and Line number of wiring layers 11, and the silicon substrate satisfying the following formula: T(μm)>=62.4×D(inch)×[1.6 (n-1)+1.0]<1/2> is used. Herein, an interlayer film between wiring layers is preferably constructed with only a single insulating material. Warp of the silicon substrate after the multilayered wiring structure is provided can be made 100μm or less.
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