发明名称 Construction that prevents the undercut of interconnect lines in plasma metal etch systems
摘要 A TixNy layer, not necessarily stoichiometric, is interposed between a titanium or aluminum interconnect layer to improve adhesion and prevent re-entrant undercutting and lifting of the interconnect layer during the process of patterning and plasma etching to form interconnect lines on a substrate, such as an oxide.
申请公布号 US5675186(A) 申请公布日期 1997.10.07
申请号 US19960672683 申请日期 1996.06.28
申请人 ADVANCED MICRO DEVICES, INC. 发明人 SHEN, LEWIS;RAMASWAMI, SHESHADRI;CHANG, MARK;CHEUNG, ROBIN
分类号 H01L23/52;H01L21/3205;H01L23/532;(IPC1-7):H01L29/43 主分类号 H01L23/52
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