发明名称 |
Construction that prevents the undercut of interconnect lines in plasma metal etch systems |
摘要 |
A TixNy layer, not necessarily stoichiometric, is interposed between a titanium or aluminum interconnect layer to improve adhesion and prevent re-entrant undercutting and lifting of the interconnect layer during the process of patterning and plasma etching to form interconnect lines on a substrate, such as an oxide.
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申请公布号 |
US5675186(A) |
申请公布日期 |
1997.10.07 |
申请号 |
US19960672683 |
申请日期 |
1996.06.28 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
SHEN, LEWIS;RAMASWAMI, SHESHADRI;CHANG, MARK;CHEUNG, ROBIN |
分类号 |
H01L23/52;H01L21/3205;H01L23/532;(IPC1-7):H01L29/43 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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