| 摘要 |
PROBLEM TO BE SOLVED: To improve yield in semiconductor memories, for example, static RAMs by relieving the failure of current in the mode flowing through the memory cell power source line. SOLUTION: Memory cell power source lines and power source lines for supplying the power source to a plurality of bit lines are connected in common to each normal memory cell group and memory cell power source lines are electrically separated between the normal memory cell groups. A means which electrically separates the above common connection lines set for each normal memory cell group from the power source line supplied from the power source PAD. For example when a failure that current flows to the memory cell 21 through the memory cell power source line occurs, the subblock 81 including the faulty memory cell is replaced by a spare subblock, and at the same time the power source separating circuit 2 is made non-conductive. Thereby the power source lines of all memory cells constituting the eliminated subblocks and the power source lines supplying power source to bit line loading circuit are made floating, interrupting the leakage current flowing path. |
