| 摘要 |
PROBLEM TO BE SOLVED: To simplify inspection of the defective wire opening when a parallel wire bonding operation is conducted on a semiconductor device for a large current. SOLUTION: In a large current semiconductor device on which a number of unit cells are arranged in parallel, a chip structure, in which at least one of main electrode regions of the semiconductor device is divided into at least two or more independent bonding pad regions 61, 62 and 63. One end of independently formed bonding wires 51, 52 and 53 is connected to the bonding pads 61, 62 and 63, and other end of the bonding wires 51, 52 and 53 is connected to a common outer terminal 71. A wire open defect is detected by measuring the ON-resistance of the semiconductor device. |
