发明名称 |
Method for forming silicon-boron binary compound layer as boron diffusion source in silicon electronic device |
摘要 |
The present invention is related to a method for fabricating a silicon electronic device having a boron diffusion source layer, includes steps of: a) providing a silicon substrate; b) depositing a silicon layer on said silicon substrate; and c) growing a silicon-boron binary compound layer on said silicon layer as said boron diffusion source. When the Si-B layer is formed by a UHV/CVD process according to the present invention, the boron concentration in the Si-B binary compound layer will be extraordinary high (up to 1x1021 to 5x1022 atoms/cm3).
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申请公布号 |
US5674777(A) |
申请公布日期 |
1997.10.07 |
申请号 |
US19950572495 |
申请日期 |
1995.12.14 |
申请人 |
NATIONAL SCIENCE COUNCIL |
发明人 |
CHEN, TUNG-PO;LEI, TAN-FU;CHANG, CHUN-YEN |
分类号 |
H01L21/225;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/225 |
代理机构 |
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地址 |
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