| 摘要 |
PROBLEM TO BE SOLVED: To suppress troubles such as poor withstand voltage to thereby reduce the thickness of a dielectric film by forming a Si film on the surface of lower electrodes and insulation film adjacent to these electrodes and heat treating the Si film in a nitrogen-contained gas to form a silicon nitride film. SOLUTION: A Si film is formed on the surface of lower electrodes 3 and insulation film 2 adjacent to these electrodes and heat treated in a nitrogen- or ammonia-contained gas to nitrify the film 4 and then a silicon nitride film 5 is formed by a vapor growth method. These steps for forming the film 4 and nitrifying it to form the film 5 are executed pref. in the same producing apparatus e.g. a longitudinal LP-CVD apparatus or sheet-feed multi-chamber type apparatus, without exposing to the atmospheric air at all. This suppresses the poor withstand voltage trouble to thereby form a thin dielectric film. |
