| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to easily conduct the mask alignment of a semiconductor element against the patterning of the element isolation region formed on a SOI(silicon on insulator) substrate. SOLUTION: After a silicon oxide film 2 has been formed on the surface of a SOI substrate 1, photoresist 3a is applied to the silicon oxide film 2. At this time, the photoresist 3b of about 5mm on the circumferencial part of the SOI substrate 1 is removed, and an aperture part 4 is formed by conducting an exposing and developing operation using a stepper. Then, photoresist 3b is applied again to the whole surface of the SOI substrate 1 where photoresist 3a is applied, the photoresist 3b other than the photoresist 3b of about 5mm on the outer circumferential part of the SOI substrate 1 is removed by conducting an exposing and developing operation, the silicon oxide film 2 is removed by wet etching using the photoresist 3a and 3b as a mask, and the photoresist 3a and 3b are removed. A V-groove 5 is formed by conducting amorphous etching using the silicon oxide film 2 as a mask, and after removal of the silicon oxide film 2, a silicon oxide film 6 is formed, and lastly, a polycrystalline silicon layer 7 is formed in such a manner that the V-groove is filled up. |
