MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To make it possible to from an active silicon layer in desired thickness on a SOI(silicon on insulator) substrate, and to conduct interelement isolation easily in a short time. SOLUTION: A groove 2 of about 3μm in width and about 1μm in depth is formed on the active silicon layer 1c of a SOI substrate 1, and a silicon oxide film 3 of about 3μm is formed by conducting pyrogenic oxidation at about 1100 deg.C for about 1200 minutes in such a manner that the active silicon layer 1c is allowed to reach an insulating film 1b. An element isolation region 4 is formed by polishing and flattening the silicon oxice film 3 until the active silicon layer 1c is exposed using CMP chemical/mechanical polishing method and the like.