| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a stabilized write characteristic during write operation by reducing the variation in write time and write speed due to temperature change. SOLUTION: The reference voltage generating section 71 of the writing drain voltage generating circuit 7 is made to be a circuit generating a reference voltage Vra having a positive temperature characteristic for temperature change by setting the activation energy E0 of the resistor R1 at 0.2eV and that of the resistor R2 at 0.1eV. The drain of a selected memory transistor is impressed with the write drain voltage pulse signal Pvd which corresponds to this reference voltage Vra. Thus, the drain current supplied to the memory transistor at a high temperature is increased to reduce the variation in write time due to temperature change.</p> |
