SILICON WAFER AND MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To provide a polycrystalline silicon film mounted silicon wafer having high gettering power and small stress which is given to the silicon wafer. SOLUTION: This silicon wafer, having a polycrystalline silicon film on one main surface, has a multilayer structure formed by laminating a polycrystalline silicon film on x-layer (x indicates an integer number of 2 or higher) having a different orientational (220) component ratio. In this case, the ratio of the orientational (220) component of the first polysrystalline silicon layer which comes in contact with the silicon wafer is larger than the ratio of orientational (220) component of the second to the x-polycrystalline silicon layer which are laminated on the first polycrystalline silicon layer.