发明名称 MAGNETORESISTANCE EFFECT ELEMENT
摘要 <p>PROBLEM TO BE SOLVED: To provide an excellent soft magnetic characteristic even when a high coersive force material is used by permitting first and second ferromagnetic conductors to contain first and second ferromagnetic films which have different directions of axis of easy magnetization. SOLUTION: On a substrate 1, a free layer 2, nonmagnetic conductor layer 3 and a pin layer 4 are formed. Magnetization of the pin layer is fixed, for instance, by a diamagnetic film such as FeMn. A pair of electrodes are provided on the laminated film. The free layer 2 is composed of first and second ferromagnetic films 2-1 and 2-2. For instance, the side which makes contact with the nonmagnetic conductor layer 3 is permitted to be the first ferromagnetic film 2-1. As for a spin valve type magnetoresistance effect element, soft magnetic characteristics are not specially demanded, since magnetization of the pin layer 4 is fixed. Soft magnetic characteristic is demanded only for the free layer 2. Therefore, the conditions of multilayer and competitive magnetization are provided so as to improve the soft magnetic characteristic of only the free layer 2.</p>
申请公布号 JPH09266334(A) 申请公布日期 1997.10.07
申请号 JP19960073404 申请日期 1996.03.28
申请人 TOSHIBA CORP 发明人 KAMIGUCHI YUZO;IWASAKI HITOSHI;SAITO KAZUHIRO;FUKUZAWA HIDEAKI;FUKUYA HIROMI;SAHASHI MASASHI
分类号 G01R33/09;G11B5/39;G11C11/15;H01F10/08;H01F10/12;H01F10/13;H01F10/16;H01F10/18;H01F10/187;H01F10/32;H01L43/08;(IPC1-7):H01L43/08 主分类号 G01R33/09
代理机构 代理人
主权项
地址