| 摘要 |
Integrated semiconductor memory device having a semiconductor substrate with a redundant circuit arrangement formed thereon for replacing a defective memory cell of the integrated semiconductor memory device by selecting a redundant memory cell likewise disposed on the semiconductor substrate, the memory cells of the integrated semiconductor memory device being constructed and addressable in blocks; the redundant memory cells being combined into a redundant memory cell field addressable as a unit by the redundant circuit arrangement; and the redundant circuit arrangement having a redundant selection circuit for selecting a redundant memory cell from the redundant memory cell field to replace a defective memory cell from any of the memory cell blocks, includes a redundance control circuit forming part of the redundant circuit arrangement and enabling, as a function of a programmed redundant selection signal, one of the data content of a normal memory cell and the data content of a redundant memory cell suitably substituted in the event of a defect in the normal memory cell of the redundant memory cell field, the redundance control circuit being connected downstream from read amplifier circuits for reading out data from the normal memory cells and from read amplifier circuits for reading out redundant data from the redundant memory cells.
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