| 摘要 |
A semiconductor device having a surge input detecting circuit is provided with the driving circuit for, for example, reversible motor. To prevent MOS power transistors constituting the power driving circuit from their destructive breakdowns (failures), when the surge input detecting circuit block detects the surge voltage input through the driving circuit which exceeds a predetermined voltage, namely, a maximum rated power supply voltage of the power driving circuit, the surge input detecting circuit outputs the signal to turn the MOS power transistors in off-states. These circuit elements are integrally mounted on a semiconductor chip. The surge input detecting circuit block detects such a surge input through a power supply terminal in terms of either of its voltage, its current, or the temperature rise in the semiconductor chip. The breakdown voltage per power transistor can be half the maximum rated power supply voltage. In addition, the surge input detecting circuit block and these power MOS transistors are fabricated into the same semiconductor chip.
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