| 摘要 |
A volatile storage device including a nonvolatile storage block. The nonvolatile storage block includes a plurality of memory cells arranged in the form of matrix at the intersections of bit lines and word lines. Each memory cell includes an address selecting transistor and a capacitor connected in series between each bit line and a cell plate line. Accordingly, additional information including production history, test results, and product information can be nonvolatily stored in the volatile storage device.
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