发明名称 REFERENCE POTENTIAL GENERATION CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a reference potential generation circuit for generating a reference potential for which an absolute value is smaller than a band gap voltage (about 1.25V) and temperature dependency is hardly present. SOLUTION: The reference potential VBB in which the temperature dependency is hardly present and a lowest potential outputted by a constant voltage source 10 being a reference is resistance-divided by first and second resistors R1 and R2 in the form of holding two transistors Q1 and Q2 in between. A potential V1 generated by the resistance division is converted into the potential in which makes a highest potential into a reference by a constant current source composed of the transistor Q3 and the resistor R4 and the resistor R5 connected to it and outputted by the emitter-follower of the transistor Q4 as the reference.
申请公布号 JPH09265330(A) 申请公布日期 1997.10.07
申请号 JP19960074695 申请日期 1996.03.28
申请人 NEC CORP 发明人 SUGAWARA MICHINORI
分类号 G05F3/30;(IPC1-7):G05F3/30 主分类号 G05F3/30
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