A ferroelectric thin film is produced on a substrate placed in an oxygen gas atmosphere within a reaction chamber. Evaporated source materials (organic metal compounds) are separately introduced in a predetermined sequence into the reaction chamber to produce a PZT or PLZT layer structure having an estimated stoichiometric composition. This cycle of introduction of the source materials is repeated continuously to produce a PZT or PLZT ferroelectric thin film having a predetermined number of PZT or PLZT layer structures piled on the substrate.
申请公布号
US5674563(A)
申请公布日期
1997.10.07
申请号
US19940305536
申请日期
1994.09.14
申请人
NISSAN MOTOR CO., LTD.;SHARP KABUSHIKI KAISHA;TARUI, YASUO