| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device in which the intrusion of moisture, movable ions, etc., into the interior from the circumference of a semiconductor chip can be prevented, and to provide; the manufacturing method of the semiconductor device. SOLUTION: Interlayer insulating films 31 and 35 are separated into the circumferential side and the internal side of a chip region 24 by metal films 34b and 37, and besides, the metal films 34b and 37 are electrically connected to a P-type silicon substrate 11 through a P-type polycrystalline silicon film 26 and a P-type impurity diffusion layer 28. As a result, the moisture and the movable ions etc., which are introduced into the interlayer insulating films 31 and 35 from the circumference of a semiconductor chip, are electrically caught by the metal films 34b and 37 and they are not infiltrated into the inside of the semiconductor chip.</p> |
