发明名称 Pattern alignment mark of semiconductor device
摘要 A pattern alignment mark equipped with at least one designated measuring pattern for an alignment during the process of fabrication of semiconductor devices, a means for attenuating light reflection on the pattern with higher light reflection intensity among said designated measuring patterns, said attenuating means preventing the occurrence of a pattern alignment error due to the differences in the light reflection intensities while measuring the overlay accuracy of patterns, thus enhancing the yield and reliability of fabrication by achieving the stabilization of the process and the reduction of the process time.
申请公布号 US5675418(A) 申请公布日期 1997.10.07
申请号 US19950499272 申请日期 1995.07.07
申请人 HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. 发明人 BAE, SANG MAN;CHOI, BYOUNG IL
分类号 G03F7/00;G03F7/20;G03F9/00;(IPC1-7):G01B11/00 主分类号 G03F7/00
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