发明名称 Method of heat-treating a glass substrate
摘要 A method of heat-treating a glass substrate where the substrate is thermally treated (such as the formation of films, growth of films, and oxidation) around or above its strain point. After thermally treating the substrate around or above its strain point the glass substrate may be slowly cooled at a rate of 0.01 DEG to 0.5 DEG C./min to achieve maximum shrinkage of the substrate. Following further thermal treatments the substrate may be quickly cooled at a rate of 10 DEG C./min to 300 DEG C./sec to suppress shrinkage of the glass substrate. The substrate can have films such as aluminum nitrate films, silicon oxide films, silicon films, insulating films, semiconductor films, etc. Film formation can occur either before or after thermal treatment of the substrate around or above its strain point and before further thermal treatments.
申请公布号 US5674304(A) 申请公布日期 1997.10.07
申请号 US19940311275 申请日期 1994.09.23
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 FUKADA, TAKESHI;SAKAMA, MITSUNORI;TERAMOTO, SATOSHI
分类号 C23C16/34;C03B25/00;C03B32/00;C03C17/00;C03C17/22;C03C17/34;H01L21/324;H01L29/78;H01L29/786;(IPC1-7):C03D25/00 主分类号 C23C16/34
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