| 发明名称 |
PROTECTIVE CIRCUIT FOR MISFET |
| 摘要 |
PURPOSE:To limit excess current by providing a depletion or junction type FET between the drain and power terminal of FET in which source voltage is applied directly between its drain and source. |
| 申请公布号 |
JPS52116081(A) |
申请公布日期 |
1977.09.29 |
| 申请号 |
JP19760032559 |
申请日期 |
1976.03.26 |
| 申请人 |
HITACHI LTD |
发明人 |
SHIMIZU SHINJI;KOSA YASUNOBU |
| 分类号 |
H01L21/8236;H01L27/088;H01L29/78 |
主分类号 |
H01L21/8236 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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