发明名称 PLASMA PRODUCING METHOD AND APPARATUS INCLUDING AN INDUCTIVELY-COUPLED PLASMA SOURCE
摘要 An apparatus (60) for processing at least a surface of an article (62) with a uniform plasma includes a processing chamber (61) in which the article (62) is diposed and a plasma source. The plasma source includes a dielectric plate (76) having a first surface forming part of an inner wall of the processing chamber (61), and an electrical energy source, including a radiofrequency source (44) and a substantially planar induction coil (30), the latter of which is disposed on a second surface of the dielectric plate (76), and to which energy from the radiofrequency source (44) is preferably supplied through impedance matching circuitry (42). The substantially planar induction coil has at least two spiral portions (36 and 38) which are symmetrical about at least one point of the substantially planar induction coil, and preferably forming a continuous "S-shape". The shape of the induction coil (30) minimizes the capacitive coupling between the induction coil (30) and the plasma, and thus the plasma sheath voltage drop, thereby improving device damage processing and plasma uniformity at the surface of the article. An impedance matching circuit connected between the subtantially planar induction coil and the radiofrequency source (44) minimizes a net voltage drop which often occurs across the leads of a prior art induction coil and thus further improves plama uniformity at the surface of the article.
申请公布号 WO9736022(A1) 申请公布日期 1997.10.02
申请号 WO1997US03048 申请日期 1997.03.04
申请人 MATERIALS RESEARCH CORPORATION 发明人 ASHTIANI, KAIHAN
分类号 H05H1/46;C23C16/00;C23C16/50;C23C16/505;C23C16/507;H01J37/32;H01L21/205;H01L21/302;H01L21/31;H05H1/24;(IPC1-7):C23C16/00 主分类号 H05H1/46
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