发明名称 |
PROCESS TO SEPARATE THE DOPING OF POLYGATE AND SOURCE DRAIN REGIONS |
摘要 |
The present invention is directed toward a method for independently doping the gate and the source-drain regions of a semiconductor device. The method is initiated by the provision of a substrate having isolation regions and a thin insulating layer. Over the substrate is formed a polysilicon layer which is doped with a first type of dopant at a first doping level. Over the polysilicon layer is formed a conducting layer of material that can withstand temperatures of 1000 DEG C, and over the conducting layer is formed a blocking layer. The polysilicon layer, the conducting layer and the blocking layer are etched to form a gate stack. Source-drain regions are subsequently doped with a second type of dopant at a second doping level. Source-drain regions are activated in a 1000 DEG C heat cycle, and, subsequently, TiSi2 is formed on the source-drain regions. Contacts are then formed. The blocking layer on the gate stack need not be removed, which aids in minimizing substrate damage and in prevention of shorting a source-drain contact region to the substrate.
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申请公布号 |
WO9736321(A1) |
申请公布日期 |
1997.10.02 |
申请号 |
WO1996US17407 |
申请日期 |
1996.11.01 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
GREENLAW, DAVID;LUNING, SCOTT |
分类号 |
H01L21/28;H01L21/336;H01L29/49;H01L29/78;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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