REDUCING REVERSE SHORT-CHANNEL EFFECT WITH LIGHT DOSE OF P WITH HIGH DOSE OF As IN N-CHANNEL LDD
摘要
Submicron nLDD CMOS logic devices with improved current drive and reduced reverse short-channel effects having heavily doped As and lightly doped P nLDD region.
申请公布号
WO9736331(A1)
申请公布日期
1997.10.02
申请号
WO1996US16540
申请日期
1996.10.16
申请人
ADVANCED MICRO DEVICES, INC.
发明人
NAYAK, DEEPAK, KUMAR;HEILER, FELICIA;RAKKHIT, RAJAT