INSULATED GATE BIPOLAR TRANSISTOR HAVING A TRENCH AND A METHOD FOR PRODUCTION THEREOF

摘要

An IGBT comprises a drain (1), a highly doped p-type substrate layer (2), a highly doped n-type buffer layer (3), a drift layer (4), a p-type base layer (5), a highly doped n-type source region layer (6) and a source (7). There is also a trench (8) etched in the base layer. It has also an insulating layer (9) with a gate electrode (10) thereon arranged on the base layer from the source region layer (6) to the drift layer (4) for the creation of a conducting inversion channel there. A contact portion (11) is present and it is both vertically separated from the source region layer (6) and has the source (7) applied thereon for collecting holes injected from the substrate layer to the drift layer at a vertical distance from said source region layer (6).