| 摘要 |
PURPOSE:To provide the sintered AlN body having the high adhesive strength of the metallized layer, good electrical conductivity and high thermal conductivity by incorporating the sintered AlN body which is specified in the ratio of the quantity of solid soln. oxygen to the AlN in the metal layer consisting of W and/or Mo. CONSTITUTION:The paste formed by adding the compd. selected from groups IIa, IIIa, for example, CaO and Y2O3 as a sintering assistant and deoxidizing agent together with AlN powder to W or Mo paste is prepd. Said paste is coated on the surface of the sintered AlN body and the unsintered body thereof and is then calcined, by which the sintered body of the metallized AlN mentioned above is obtd. The metal layer of the sintered body of the metallized AlN mentioned above is required to contain the sintered AlN body having <=0.3wt.% quantity of solid soln. oxygen with respect to the AlN. The sintered body of the metallized AlN obtd. in such a manner exhibits the excellent thermal conductivity or low heat resistance and is, therefore, useful as the material for an insulating substrate, etc., in semiconductor industry. |
