| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a thin film uniformly improving the crystallization of a thin film used for a functional device in a large area in a state in which thermal influence given to other layers is small. SOLUTION: This device is provided with a vacuum tank 1 having a gas introducing mechanism, a target 6, a laser oscillator 2, a mechanism 25 scanning a laser beam 3 emitted from the laser oscillator 2 on the surface of the target 6, a substrate 8, plural shielding boards 19 arranged in a plane parallel the target 6 and the substrate 8 therebetween, a pulse laser oscillator 10 and an optical device irradiating the substrate 8 with the laser beam. Then, the prescribed position of the target 6 is irradiated with the laser beam 3 to allow the constituting substance of the target 6 to jet, and the same place on the surface of the thin film deposited on the substrate 8 is irradiated with the pulse laser beam so as to regulate the irradiating time to 10ns to 1ms and the irradiating distance to >=1μs for two times.
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