| 摘要 |
The present invention relates to a low pressure chemical vapor deposition (LPCVD) method for a semiconductor device which restrains growth of an oxide film by using helium gas. In the LPCVD method for forming a film on a wafer using an LPCVD equipment having an outer tube, an inner tube, a reaction gas inlet supplying reaction gas to the inner tube's lower section, a pumping line discharging the reaction gas, and a receiving part where the wafer rests, a gas inlet is further provided to the outer tube's lower section to supply the helium gas to the inner tube, thus removing the remaining oxygen gas and restraining the growth of an oxide film.
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