| 摘要 |
PURPOSE:To reduce a soft error ratio by forming a pillar of a projection on an insulation layer which is buried in a substrate. CONSTITUTION:A groove 6 is formed lengthwise and breadthwise using a junction wafer as a starting material and the oxide film 2 as an etching stopper by anisotropy etching from a substrate 18 to form a plurality of pillar-like projections 51, 52... of semiconductor which are isolated by the groove 6. A MOS capacitor is formed at a lower section of the pillar-like projection 5, and a MOSFET at an upper section. In this way, soft error is reduced and it becomes possible to form a DRAM which enables high integration and a large capacity. |
