发明名称 |
Semiconductor pressure sensor |
摘要 |
The present invention provides a semiconductor pressure sensor having a glass base and a metal base bonded together satisfactorily so that a silicon diaphragm may not be affected by residual strain, and an intelligent differential pressure and pressure transmitting device employing the semiconductor pressure sensor. The semiconductor pressure sensor comprises a silicon diaphragm (1) provided with a strain-sensitive element, a glass or ceramic base (2) bonded to the silicon diaphragm (1), and a metal base (4) bonded to the glass or ceramic base (2) with a bonding glass (3). The thermal expansion coefficient of the metal base (4) at a temperature corresponding to the strain point of the bonding glass (3) is not greater than that of the glass or ceramic base (2).
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申请公布号 |
US5672826(A) |
申请公布日期 |
1997.09.30 |
申请号 |
US19960648747 |
申请日期 |
1996.05.16 |
申请人 |
HITACHI, LTD. |
发明人 |
SUZUKI, HIDEO;TAKAHASHI, KEN;TAKAHASHI, YUKIO;YAMAMOTO, YOSHIMI;AOKI, KENICHI;TOBITA, TOMOYUKI |
分类号 |
G01L13/06;G01L9/00;G01L9/04;G01L19/00;(IPC1-7):G01L9/04 |
主分类号 |
G01L13/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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