发明名称 Semiconductor pressure sensor
摘要 The present invention provides a semiconductor pressure sensor having a glass base and a metal base bonded together satisfactorily so that a silicon diaphragm may not be affected by residual strain, and an intelligent differential pressure and pressure transmitting device employing the semiconductor pressure sensor. The semiconductor pressure sensor comprises a silicon diaphragm (1) provided with a strain-sensitive element, a glass or ceramic base (2) bonded to the silicon diaphragm (1), and a metal base (4) bonded to the glass or ceramic base (2) with a bonding glass (3). The thermal expansion coefficient of the metal base (4) at a temperature corresponding to the strain point of the bonding glass (3) is not greater than that of the glass or ceramic base (2).
申请公布号 US5672826(A) 申请公布日期 1997.09.30
申请号 US19960648747 申请日期 1996.05.16
申请人 HITACHI, LTD. 发明人 SUZUKI, HIDEO;TAKAHASHI, KEN;TAKAHASHI, YUKIO;YAMAMOTO, YOSHIMI;AOKI, KENICHI;TOBITA, TOMOYUKI
分类号 G01L13/06;G01L9/00;G01L9/04;G01L19/00;(IPC1-7):G01L9/04 主分类号 G01L13/06
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